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NTF5P03, NVF5P03
TYPICAL ELECTRICAL CHARACTERISTICS
1000
900
800
T J = 25 ° C
V GS = 0 V
12.5
10
? V DS
Q T
25
20
700
600
500
C iss
7.5
? V GS
15
400
300
5.0
Q 1
Q 2
10
200
100
C oss
C rss
2.5
I D = ? 2 A
T J = 25 ° C
5
0
0
5
10 15 20 25
DRAIN ? TO ? SOURCE VOLTAGE (V)
30
0
0
10
20 30 40 50
Q g , TOTAL GATE CHARGE (nC)
0
60
Figure 7. Capacitance Variation
Figure 8. Gate ? to ? Source and
Drain ? to ? Source Voltage versus Total Charge
1000
V DD = ? 15 V
I D = ? 4.0 A
V GS = ? 10 V
t d(off)
4.00
3.50
3.00
V GS = 0 V
T J = 25 ° C
2.50
100
t f
t r
2.00
1.50
1.00
0.50
10
1
10
t d(on)
100
0.00
0.5
0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
? V SD , SOURCE ? TO ? DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus Current
100
10
1
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
dc
250
200
150
I D = ? 6 A
0.1
0.01
0.1
10 ms
1 ms
100 m s
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10 m s
10 100
100
50
0
25
50 75 100 125
150
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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